Features: ` Low on-resistanceRDS(on) = 0.5 W typ. (at VGS = 4V, ID = 100 mA)` 2.5V gate drive devices.` Small package (MPAK).Specifications Parameter Symbol Ratings Unit Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS ±10 V Drain Current (DC) ID -0.3 A Dr...
2SJ486: Features: ` Low on-resistanceRDS(on) = 0.5 W typ. (at VGS = 4V, ID = 100 mA)` 2.5V gate drive devices.` Small package (MPAK).Specifications Parameter Symbol Ratings Unit Drain to Source V...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
` Low on-resistance
RDS(on) = 0.5 W typ. (at VGS = 4V, ID = 100 mA)
` 2.5V gate drive devices.
` Small package (MPAK).
Parameter | Symbol | Ratings | Unit |
Drain to Source Voltage | VDSS | 30 | V |
Gate to Source Voltage | VGSS | ±10 | V |
Drain Current (DC) | ID | -0.3 | A |
Drain Current (pulse) | ID(pulse) *1 | -0.6 | A |
Total Power Dissipation | Pch | 150 | mW |
Channel Temperature | Tch | 150 | °C |
Storage Temperature | Tstg | 55 to +150 | °C |
Note: 1. PW 10ms, duty cycle 1 %