2SJ484 Selling Leads, Price trend, 2SJ484 DataSheet download, circuit diagram from SeekIC.com

Features: ` Low on-resistanceRDS(on) = 0.18 typ. (at VGS = 10V, ID = 1A)` Low drive current` High speed switching` 4V gate drive devices.Specifications Parameter Symbol Ratings Unit Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS ±10 V Drain Current (DC) ID ...

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SeekIC No. : 004225205 Detail

2SJ484: Features: ` Low on-resistanceRDS(on) = 0.18 typ. (at VGS = 10V, ID = 1A)` Low drive current` High speed switching` 4V gate drive devices.Specifications Parameter Symbol Ratings Unit Drai...

2SJ484 Data Sheet

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Part Number:: 2SJ484
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2025/2/15

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Recent History
What is this?

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Application4-V gate drive Low drain−source ON resistance : RDS (ON) = 33 m (typ.) High forwa...
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US $1.62 - 1.62 / Piece

MOSFET P-CH 60V 20A TO-220FL

Product Details

Description

Features:

` Low on-resistance
R_DS(on) = 0.18 typ. (at V_GS = 10V, I_D = 1A)
` Low drive current
` High speed switching
` 4V gate drive devices.

Specifications

Parameter	Symbol	Ratings	Unit
Drain to Source Voltage	V_DSS	30	V
Gate to Source Voltage	V_GSS	±10	V
Drain Current (DC)	I_D	-2	A
Drain Current (pulse)	I_D(pulse)^*1	-4	A
Body to drain diode reverse drain current	I_DR	-2	A
Total Power Dissipation	P_ch^*1	1	mW
Channel Temperature	T_ch	150	°C
Storage Temperature	T_stg	55 to +150	°C

Note: 1. PW 10ms, duty cycle 1 %
2. When using aluminium ceramic board (12.5 x 20 x 0.7 mm)

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2SJ484

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