Features: · Low on-resistance RDS(on) = 25 mW typ.· 4V gate drive devices.· High speed switchingSpecifications Parameter Symbol Ratings Unit Collector to base voltage VDSS 30 V Collector to emitter voltage VGSS ±20 V Drain current ID 30 A...
2SJ479(L): Features: · Low on-resistance RDS(on) = 25 mW typ.· 4V gate drive devices.· High speed switchingSpecifications Parameter Symbol Ratings Unit Collector to base voltage VDSS ...
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Parameter |
Symbol |
Ratings |
Unit |
Collector to base voltage |
VDSS |
30 |
V |
Collector to emitter voltage |
VGSS |
±20 |
V |
Drain current |
ID |
30 |
A |
Drain peak current |
I D(pulse)Note1 |
-120 |
A |
Body to drain diode reverse drain current |
IC |
30 |
A |
Channel dissipation |
P c |
50 |
W |
Channel temperature |
Tj |
150
|
°C |
Storage temperature |
Ttsg |
55 ~ +150 |
°C |