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2SJ479

Features: • Low on-resistance RDS (on) = 25 m typ.• 4 V gate drive devices.• High speed switchingSpecificationsDrain to source voltage VDSS ..............30 VGate to source voltage VGSS ...............±20 VDrain current ID ...................................30 ADrain peak current...

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SeekIC No. : 004225198 Detail

2SJ479: Features: • Low on-resistance RDS (on) = 25 m typ.• 4 V gate drive devices.• High speed switchingSpecificationsDrain to source voltage VDSS ..............30 VGate to source voltage...

2SJ479 Data Sheet

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Part Number:
2SJ479
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/22

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Product Details

Description



Features:

• Low on-resistance RDS (on) = 25 m typ.
• 4 V gate drive devices.
• High speed switching


Specifications

Drain to source voltage VDSS ..............30 V
Gate to source voltage VGSS ...............±20 V
Drain current ID ...................................30 A
Drain peak current ID (pulse).............120 A
Body to drain diode reverse drain current IDR...30 A
Channel dissipation Pch...........................50 W
Channel temperature Tch.................... 150 °C
Storage temperature Tstg..... 55 to +150 °C


Description

2SJ479 is a High speed power switching


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