2SJ477-01MR

The 2SJ477-01MR is designed as one kind of P-channel enhancement mode power MOSFET that can be used for switching application. The absolute maximum ratings of 2SJ477-01MR can be summarized as:(1)drain-source voltage: -60 V;(2)continuous drain current: +/- 25 A;(3)pulsed drain current: +/- 100 A;(4)gate-source voltage: +/- 20 V;(5)maximum avalanche energy: 519.8 mJ;(6)maximum power dissipation: 40 W;(7)operating and storage: 150 ;(8)temperature range: -55 to +150 .

The electrical characteristics of 2SJ477-01MR can be summarized as:(1)drain-source breakdown voltage: -60 V;(2)gate threshold voltage: -1.0 to -2.5 V;(3)zero gate voltage drain current Tch=25: -10 to -500 uA;(4)zero gate voltage drain current Tch=125: -0.2 to -1.0 mA;(5)gate source leakage current: 10 to 100 nA;(6)input capacitance: 2000 to 3000 pF;(7)output capacitance: 700 to 1050 pF;(8)reverse transfer capacitance: 450 to 680 pF;(9)reverse recovery time: 160 ns;(10)reverse recovery change: 0.9 uc. If you want to know more information about 2SJ477-01MR, please download the datasheet in www.seekic.com or www.chinaicmart.com.