Features: ` Low on-resistance RDS(on) = 25 m typ.` 4V gate drive devices.` High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS -30 V Gate to source voltage VGSS ±30 V Drain current ID -30 A Drain peak current ID(pulse) Note1 -120 ...
2SJ471: Features: ` Low on-resistance RDS(on) = 25 m typ.` 4V gate drive devices.` High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS -30 V Gate to sou...
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Item | Symbol | Ratings | Unit |
Drain to source voltage | VDSS | -30 | V |
Gate to source voltage | VGSS | ±30 | V |
Drain current | ID | -30 | A |
Drain peak current | ID(pulse) Note1 | -120 | A |
Body to drain diode reverse drain current | IDR | -30 | A |
Channel dissipation |
Pch Note2 | 30 | W |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | 55 to +150 |