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2SJ465

Application`2.5-V gate drive `Low drainsource ON resistance : RDS (ON)= 0.54(typ.) `High forward transfer admittance : |Yfs| = 1.7 S (typ.) `Low leakage current : IDSS= 100 A (max) (VDS= 16 V) `Enhancement mode : Vth= 0.5~1.1 V (VDS= 10 V, ID= 200 A) Specifications Characteristic Symbol...

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SeekIC No. : 004225190 Detail

2SJ465: Application`2.5-V gate drive `Low drainsource ON resistance : RDS (ON)= 0.54(typ.) `High forward transfer admittance : |Yfs| = 1.7 S (typ.) `Low leakage current : IDSS= 100 A (max) (VDS= 16 V) `Enha...

2SJ465 Data Sheet

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Part Number:
2SJ465
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Application

`2.5-V gate drive  
`Low drainsource ON resistance : RDS (ON) = 0.54(typ.)  
`High forward transfer admittance : |Yfs| = 1.7 S (typ.)  
`Low leakage current : IDSS= 100 A (max) (VDS= 16 V)   
`Enhancement mode : Vth = 0.5~1.1 V (VDS= 10 V, ID= 200 A) 
 


Specifications

Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS=20k)
Gate-source voltage
VDSS
VDGR
VGSS
-16
-16
±8
V
V
V
Drain current DC (Note 1)
ID
-2
A
Pulse (Note 1)
IDP
-6
Drain power dissipation
Drain power dissipation (Note 2)
Channel temperature
Storage temperature range
PD
PD
Tch
Tstg
0.5
1.5
150
-55~150
W
W


Note 1:  Ensure that the channel temperature does not exceed 150
Note 2:  Mounted on a ceramic substrate (25.4 mm*25.4 mm* 0.8 mm)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
Note 3: in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"Derating Concept an Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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