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2SJ464

Features: • 4-V gate drive• Low drain-source ON resistance: RDS (ON) = 64 m (typ.)• High forward transfer admittance: |Yfs| = 15 S (typ.)• Low leakage current: IDSS = −100 A (max) (VDS = −100 V)• Enhancement mode: Vth = −0.8~−2.0 V (VDS = ͨ...

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2SJ464: Features: • 4-V gate drive• Low drain-source ON resistance: RDS (ON) = 64 m (typ.)• High forward transfer admittance: |Yfs| = 15 S (typ.)• Low leakage current: IDSS = −...

2SJ464 Data Sheet

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Part Number:
2SJ464
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 4-V gate drive
• Low drain-source ON resistance: RDS (ON) = 64 m (typ.)
• High forward transfer admittance: |Yfs| = 15 S (typ.)
• Low leakage current: IDSS = −100 A (max) (VDS = −100 V)
• Enhancement mode: Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)


Specifications

Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
-100
V
Drain-gate voltage (RGS = 20 k)

VDGR

−100
 V
Gate-emitter voltage
VEBS
±20
V
Collector current
DC (Note1)
ID
-18
A
Pulse (Note1)
IDP
-72
Diode forward current
DC
IF
30
A
1 ms
IFP
120
Collector power dissipation @ Tc = 25
PD
45
W
Single pulse avalanche energy(Note2)
EAS
937
mJ
Avalanche current
IAR
−18
A
Repetitive avalanche energy (Note3)

EAR

4.5

 mJ
Junction temperature
Tj
150
Storage temperature range
Tstg
-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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