Features: · Low on-resistance.· Low drive power· High speed switching· 2.5 V gate drive device.ApplicationHigh speed power switchingSpecifications PARAMETER SYMBOL RATING UNIT Drain to source voltage VDSS -60 V Gate to source voltage VGSS ±20 V Drain curr...
2SJ450: Features: · Low on-resistance.· Low drive power· High speed switching· 2.5 V gate drive device.ApplicationHigh speed power switchingSpecifications PARAMETER SYMBOL RATING UNIT Dra...
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PARAMETER |
SYMBOL |
RATING |
UNIT |
Drain to source voltage |
VDSS |
-60 |
V |
Gate to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
-1 |
A |
Drain peak current |
ID(pulse)*1 |
-2 |
A |
Drain peak current |
IDR |
-1 |
A |
Channel dissipation |
Pch*2 |
1
|
W |
Channel temperature |
Tj |
150 |
|
Storage temperature |
Tstg |
-55to+150 |