DescriptionThe 2SJ448 is a kind of P-channel MOS field effect transistor.It can be used for high voltage switching applications.It has some features as follows.(1) low on-resistance; (2) low CISS which is 470 pF; (3) built-in G-S gate protection diodes; (4) high avalanche capability ratings; (5) i...
2SJ448: DescriptionThe 2SJ448 is a kind of P-channel MOS field effect transistor.It can be used for high voltage switching applications.It has some features as follows.(1) low on-resistance; (2) low CISS wh...
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The 2SJ448 is a kind of P-channel MOS field effect transistor.It can be used for high voltage switching applications.It has some features as follows.(1) low on-resistance; (2) low CISS which is 470 pF; (3) built-in G-S gate protection diodes; (4) high avalanche capability ratings; (5) isolated TO-220 package.
The following is absolute maximum ratings of 2SJ448 at TA is 25. (1): drain-source voltage(VDSS) is -250 V; (2): gate-source voltage(VGSS) is ±25 V; (3): DC drain current(ID) is ±4.0 A and pulse drain current is ±16 A; (4): total power dissipation(PD) is 30 W when TC is 25 and is 2.0 W when TA is 25; (5): channel temperature (TCH) is 150; (6): storage temperature range is from -55 to 150.
What comes next is the electrical characters of 2SJ448 at TA is 25. (1): the typical drain to source on-resistance is 1.5 and the maximum is 2.0 at VGS is -10 V and ID is -20 A; (2): the minimum gate to source cutoff voltage is -4.0 V,the typical is -4.8 V and the maximum is -5.5 V when VDS is -10 V and ID is -1 mA; (3): the typical input capacitance is 470 pF and output capacitance is 200 pF at the conditon of VDs is -10 V,VGS is 0 and f is 1 MHz; (4): the typical reverse recovery time is 195 ns when IF is -4.0 A and VGS is 0; (5): the typical reverse recovery charge is 760 nC at IF is -4.0 A and VGS is 0; (6): the typical rise time is 7 ns and is 34 ns for the turn-off delay time and is 10 ns for the fall time at ID is -2.0 A,VDD is -125 V and RG is 10 .