Application• High breakdown voltage: VDSS = −180 V• High forward transfer admittance: |Yfs| = 4.0 S (typ.)Specifications Characteristics Symbol Rating Unit Drain-source voltage VDSS −180 V Gate-source voltage VGSS ±20 V Drain c...
2SJ440: Application• High breakdown voltage: VDSS = −180 V• High forward transfer admittance: |Yfs| = 4.0 S (typ.)Specifications Characteristics Symbol Rating Unit Dr...
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Characteristics |
Symbol |
Rating |
Unit |
Drain-source voltage |
VDSS |
−180 |
V |
Gate-source voltage |
VGSS |
±20 |
V |
Drain current (Note 1) |
ID |
−9 |
A |
Power dissipation (Tc = 25°C) |
PD |
80 |
W |
Channeltemperature |
Tch |
150 |
|
Storage temperature range |
Tstg |
−55 to 150 |
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).