2SJ440

Application• High breakdown voltage: VDSS = −180 V• High forward transfer admittance: |Yfs| = 4.0 S (typ.)Specifications Characteristics Symbol Rating Unit Drain-source voltage VDSS −180 V Gate-source voltage VGSS ±20 V Drain c...

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SeekIC No. : 004225175 Detail

2SJ440: Application• High breakdown voltage: VDSS = −180 V• High forward transfer admittance: |Yfs| = 4.0 S (typ.)Specifications Characteristics Symbol Rating Unit Dr...

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Part Number:
2SJ440
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/22

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Product Details

Description



Application

• High breakdown voltage: VDSS = −180 V
• High forward transfer admittance: |Yfs| = 4.0 S (typ.)



Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−180
V
Gate-source voltage
VGSS
±20
V
Drain current (Note 1)
ID
−9
A
Power dissipation (Tc = 25°C)
PD
80
W
Channeltemperature
Tch
150
Storage temperature range
Tstg
−55 to 150

Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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