DescriptionThe 2SJ440-Y is a kind of P-channel silicon MOS.It can be used for audio requency power amplifer application.It has some features as follows.(1) high breakdown voltage; (2) high forward transfer admittance. The following is absolute maximum ratings of 2SJ440-Y at TA is 25. (1): drain-s...
2SJ440-Y: DescriptionThe 2SJ440-Y is a kind of P-channel silicon MOS.It can be used for audio requency power amplifer application.It has some features as follows.(1) high breakdown voltage; (2) high forward t...
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The 2SJ440-Y is a kind of P-channel silicon MOS.It can be used for audio requency power amplifer application.It has some features as follows.(1) high breakdown voltage; (2) high forward transfer admittance.
The following is absolute maximum ratings of 2SJ440-Y at TA is 25. (1): drain-source voltage(VDSS) is -180 V; (2): gate-source voltage(VGSS) is ±20 V; (3): drain current(ID) is -9 A ; (4): allowable drain power dissipation(PD) is 80 W; (5): channel temperature(TCH) is 150; (6): storage temperature range is from -55 to 150.
What comes next is the electrical characters of 2SJ440-Y at TA is 25. (1): the maximum gate leakage current is ±0.5 A when VDS is 0 and VGS is ±20 V; (2): the minimum drain-source breakdown voltage is -180 V at ID is -10 mA and VGS is 0; (3): the minimum gate-source cutoff current is -1.4 V and the maximum is -2.8 V at the condition of VDS is -10 V and ID is -0.1 A; (4): the typical drain-source saturation voltage is -1.5 V and is -5.0 V for the maximum when ID is -6 A and VGS is -10 V; (5): the input capacitance is 1300 pF and the output capacitance is 350 pF at VDS is -30 V and VGS is 0 and f is 1 MHz; (6): the typical recerse transfer capacitance is 200 pF when VDS is -30 V and VGS is 0 and f is 1 MHz.