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2SJ439

Application2.5-V gate drive Low drain−source ON-resistance : RDS (ON) = 0.18 (typ.)High forward transfer admittance : |Yfs| = 6.0 S (typ.)Low leakage current : IDSS = −100 A (max) (VDS = −16 V) Enhancement mode : Vth = −0.5~−1.1 V (VDS = −10 V, ID = −1 mA...

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SeekIC No. : 004225174 Detail

2SJ439: Application2.5-V gate drive Low drain−source ON-resistance : RDS (ON) = 0.18 (typ.)High forward transfer admittance : |Yfs| = 6.0 S (typ.)Low leakage current : IDSS = −100 A (max) (VDS ...

2SJ439 Data Sheet

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Part Number:
2SJ439
Supply Ability:
5000

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  • 1~5000
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Total Cost: $ 0.00

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Product Details

Description



Application

2.5-V gate drive
Low drain−source ON-resistance : RDS (ON) = 0.18 (typ.)
High forward transfer admittance : |Yfs| = 6.0 S (typ.)
Low leakage current : IDSS = −100 A (max) (VDS = −16 V)
Enhancement mode : Vth = −0.5~−1.1 V (VDS = −10 V, ID = −1 mA)


Specifications

Characteristics
Symbol
Ratings
Unit
Drain-source voltage
VDSS
−16
V
Drain-gate voltage (RGS=20 k)
VDGR
−16
V
Gate−source voltage
VGSS
±8
V
Drain current DC (Note 1)
ID
−5
A
Pulse (Note 1)
IDP
−20
Drain power dissipation (Tc = 25)
PD
20
W
Channel temperature
Tch
150
Storage temperature range
Tstg
-55 ~ +150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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