2SJ418 Selling Leads, Price trend, 2SJ418 DataSheet download, circuit diagram from SeekIC.com

Features: · Low ON resistance.· Ultrahigh-speed switching.· 4V drive.Specifications Item Symbol conditions Rating Unit Drain to source voltage VDSS -30 V Gate to vource voltage VGSS ±20 V Continous Drain (DC) ID -8 A Drain Current(...

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SeekIC No. : 004225169 Detail

2SJ418: Features: · Low ON resistance.· Ultrahigh-speed switching.· 4V drive.Specifications Item Symbol conditions Rating Unit Drain to source voltage VDSS -30 V Gate to...

2SJ418 Data Sheet

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Part Number:: 2SJ418
Supply Ability:: 5000

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Upload time: 2024/6/4

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2SJ415 evaluate
PinoutSpecifications Absolute maximum ratingsVDSS [V]60VGSS [V]20ID [A]10PD [W]40Tc=25°C ...
2SJ416 evaluate
DescriptionThe 2SJ416 is a kind of P-channel silicon MOSFET.It can be used for ultrahigh-speed swi...
2SJ417 evaluate
DescriptionThe 2SJ417 is a kind of P-channel silicon MOSFET.It can be used for ultrahigh-speed swi...

Product Details

Description

Features:

· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.

Specifications

Item	Symbol	conditions	Rating	Unit
Drain to source voltage	V_DSS		-30	V
Gate to vource voltage	V_GSS		±20	V
Continous Drain (DC)	I_D		-8	A
Drain Current(Pulse)	I_DP	PW 10 s Duty cycle 1 %	-32	A
Allowable Power Dissipation	P_D		1.0	W
Allowable Power Dissipation	P_D	T_C = 25 °C	30	W
Channel temperature	Tch		150	°C
Storage temperature	Tstg		-55to+150	°C

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2SJ418

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