2SJ417

The 2SJ417 is a kind of P-channel silicon MOSFET.It can be used for ultrahigh-speed switching applications.It has some features as follows.(1) low on-resistance; (2) ultrahigh-speed switching; (3) 4 V drive.

The following is absolute maximum ratings of 2SJ417 at TA is 25. (1): drain-source voltage(VDSS) is -30 V; (2): gate-source voltage(VGSS) is ±20 V; (3): DC drain current(ID) is -4 A and pulse drain current(IPD) is  -16 A; (4): allowable drain power dissipation(PD) is 20 W; (5): channel temperature(TCH) is 150; (6): storage temperature range is from -55  to 150.

What comes next is the electrical characters of 2SJ417 at TA is 25. (1): the minimum drain-source breakdown voltage is -30 V when ID is -1 mA and VGS is 0; (2): the minimum cutoff voltage is -1.0 V and is -2.5 for the maximum at VDS is -10 V and ID is -1 mA; (3): the typical input capacitance is 370 pF when VDS is -10 V and f is 1 MHz; (4): the typical turn-on delay time is 10 ns and is 50 ns for the rise time and is 135 ns for the turn-off delay time and is 125 for the fall time; (5): the typical diode forward voltage is -1.0 V and the maximum is -1.2 V at the condition of IS is -2 A and VGS is 0.