2SJ416

DescriptionThe 2SJ416 is a kind of P-channel silicon MOSFET.It can be used for ultrahigh-speed switching applications.It has some features as follows.(1) low on-resistance; (2) ultrahigh-speed switching; (3) 4 V drive. The following is absolute maximum ratings of 2SJ416 at TA is 25. (1): drain-so...

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SeekIC No. : 004225167 Detail

2SJ416: DescriptionThe 2SJ416 is a kind of P-channel silicon MOSFET.It can be used for ultrahigh-speed switching applications.It has some features as follows.(1) low on-resistance; (2) ultrahigh-speed switc...

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Part Number:
2SJ416
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/3

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Product Details

Description



Description

The 2SJ416 is a kind of P-channel silicon MOSFET.It can be used for ultrahigh-speed switching applications.It has some features as follows.(1) low on-resistance; (2) ultrahigh-speed switching; (3) 4 V drive.

The following is absolute maximum ratings of 2SJ416 at TA is 25. (1): drain-source voltage(VDSS) is -30 V; (2): gate-source voltage(VGSS) is ±20 V; (3): DC drain current(ID) is -2 A and pulse drain current(IPD) is  -8 A; (4): allowable drain power dissipation(PD) is 1.5 W; (5): channel temperature(TCH) is 150; (6): storage temperature range is from -55  to 150.

What comes next is the electrical characters of 2SJ416 at TA is 25. (1): the minimum drain-source breakdown voltage is -30 V when ID is -1 mA and VGS is 0; (2): the minimum cutoff voltage is -1.0 V and is -2.5 for the maximum at VDS is -10 V and ID is -1 mA; (3): the typical input capacitance is 170 pF when VDS is -10 V and f is 1 MHz; (4): the typical turn-on delay time is 10 ns and is 20 ns for the rise time and is 110 ns for the turn-off delay time and is 75 for the fall time; (5): the typical diode forward voltage is -1.0 V and the maximum is -1.2 V at the condition of IS is -2 A and VGS is 0.




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