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2SJ411

Features: • Radial taping supported• Can be directly driven by 5-V IC• Low ON resistance RDS(on) = 0.24 MAX. @VGS = 4 V, ID = 2.5 A RDS(on) = 0.11 MAX. @VGS = 10 V, ID = 2.5 ASpecifications Item Symbol Test conditions Rating Unit Drain to source voltage ...

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SeekIC No. : 004225163 Detail

2SJ411: Features: • Radial taping supported• Can be directly driven by 5-V IC• Low ON resistance RDS(on) = 0.24 MAX. @VGS = 4 V, ID = 2.5 A RDS(on) = 0.11 MAX. @VGS = 10 V, ID = 2.5 ASpe...

2SJ411 Data Sheet

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Part Number:
2SJ411
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/3

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Product Details

Description



Features:

• Radial taping supported
• Can be directly driven by 5-V IC
• Low ON resistance
   RDS(on) = 0.24 MAX. @VGS = 4 V, ID = 2.5 A
   RDS(on) = 0.11 MAX. @VGS = 10 V, ID = 2.5 A


Specifications

Item
Symbol
Test conditions
Rating
Unit
Drain to source voltage
VDSS
 VGS = 0
-30
V
Gate to vource voltage
VGSS
 VDS = 0
-20/+10
V
Drain current (DC)
ID(DC)
  
±5.0
A
Drain current (Pulse)
ID(pulse)

PW 10 s
Duty cycle 1 %
±20.0
A
Total power dissipation
PT1
 TA = 25 °C
1.0
W
Total power dissipation
PT2
 TC = 25 °C
6.0
W
Channel temperature
Tch
  
150
°C
Storage temperature
Tstg
  
-55to+150
°C



Description

The 2SJ411 is a P-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V.

2SJ411 has a low ON resistance and superb switching characteristics and is ideal for power control switches and DC/DC converters




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