2SJ402(Q)

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25° C: 30A
Packaging: Tube
Mounting Type: Through Hole
Rds On (Max) @ Id, Vgs: 38 mOhm @ 15A, 10V
Gate Charge (Qg) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Power - Max: 100W
Package / Case: TO-220-3, Short Tab
Manufacturer: Toshiba
Input Capacitance (Ciss) @ Vds: 3300pF @ 10V
Supplier Device Package: TO-220FL


Parameters:

Technical/Catalog Information	2SJ402(Q)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	38 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	3300pF @ 10V
Power - Max	100W
Packaging	Tube
Gate Charge (Qg) @ Vgs	110nC @ 10V
Package / Case	2-10S1B
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SJ402 Q 2SJ402Q