2SJ294

      The 2SJ294 is designed as silicon P channel MOSFET whose application is high speed power switching.
      2SJ294 has six features.The first one is that it would have low onresistance.The second one is that it would have high speed switching.The third one is that it would have low drive current.The fourth one about it is that 4 V gate drive device can be driven from 5 V source.The fifth one is that it would be suitable for Switching regulator, DC DC converter.The last one is it would have avalanche ratings.That are all the features.
      Some absolute maximum ratings(Ta=25) of 2SJ294 have ben concluded into several points as follow.The first one is about its drain to source voltage which would be 60 V.The second one is about its gate to source voltage which would be ±20 V.The third one is about its drain current which would be 20 A.The fourth one is about its drain peak current which would be 80 A.The fifth one is about its bodydrain diode reverse drain current which would be -20 A.The sixth one is about its avalanche current which would be 20 A.The seventh one is about its avalanche energy which would be 34 mJ.The eighth one is about its channel dissipation which would be 35 W.The ninth one is about its channel temperature which would be 150 °C.The last one is about its storage temperature which would be from 55 to +150 °C.Something should be noted is that PW 10 s, duty cycle 1 % for drain peak current.And the channel dissipation at Tc = 25 °C.Also the avalanche current and avalanche energe value at Tch = 25 °C, Rg 50 .
      Also some important electrical characteristics about 2SJ294.The first one is its drain to source breakdown voltage would be 60(min) V with condition of Id=10 mA,Vgs=0.The second one is about its gate to source breakdown voltage which would be ±20(min) V with condition of Ig=±100 A,Vds = 0.The third one is about 2SJ294's gate to source leak current which would be ±10(max) A with condition of Vgs=±16 V,Vds=0.And so on.For more information please contact us.