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2SJ200-Y(F)

MOSFET P-CH 180V 10A TO-3PN

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SeekIC No. : 003430978 Detail

2SJ200-Y(F): MOSFET P-CH 180V 10A TO-3PN

2SJ200-Y(F) Data Sheet

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Part Number:
2SJ200-Y(F)
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Series: - Manufacturer: Toshiba
FET Type: MOSFET P-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Continuous Drain Current : 2.1 A Drain to Source Voltage (Vdss): 180V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 10A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: - DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: -
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1300pF @ 30V
Power - Max: 120W Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
Gate Charge (Qg) @ Vgs: -
Current - Continuous Drain (Id) @ 25° C: 10A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Mounting Type: Through Hole
Packaging: Bulk
Power - Max: 120W
Package / Case: TO-3P-3, SC-65-3
Manufacturer: Toshiba
Supplier Device Package: TO-3P(N)
Input Capacitance (Ciss) @ Vds: 1300pF @ 30V
Drain to Source Voltage (Vdss): 180V


Parameters:

Technical/Catalog Information2SJ200-Y(F)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)180V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs-
Input Capacitance (Ciss) @ Vds 1300pF @ 30V
Power - Max120W
PackagingTube
Gate Charge (Qg) @ Vgs-
Package / Case2-16C1B (TO-247 N)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SJ200 Y F
2SJ200YF



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