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2SJ168

Features: • Excellent switching time: ton = 14 ns (typ.)• High forward transfer admittance: |Yfs| = 100 mS (min)@ID = −50 mA• Low on resistance: RDS (ON) = 1.3 Ω (typ.) @ ID = −50 mA• Enhancement-mode• Complementary to 2SK1062• Excellent switch...

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SeekIC No. : 004225023 Detail

2SJ168: Features: • Excellent switching time: ton = 14 ns (typ.)• High forward transfer admittance: |Yfs| = 100 mS (min)@ID = −50 mA• Low on resistance: RDS (ON) = 1.3 Ω (typ.)...

2SJ168 Data Sheet

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Part Number:
2SJ168
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/13

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Product Details

Description



Features:

• Excellent switching time: ton = 14 ns (typ.)
• High forward transfer admittance: |Yfs| = 100 mS (min)
@ID = −50 mA
• Low on resistance: RDS (ON) = 1.3 Ω (typ.) @ ID = −50 mA
• Enhancement-mode
• Complementary to 2SK1062





• Excellent switching time: ton = 14 ns (typ.)
• High forward transfer admittance: |Yfs| = 100 mS (min)
@ID = −50 mA
• Low on resistance: RDS (ON) = 1.3 Ω (typ.) @ ID = −50 mA
• Enhancement-mode
• Complementary to 2SK1062






Application

· High Speed Switching Applications
· Analog Switch Applications
· Interface Applications



· High Speed Switching Applications
· Analog Switch Applications
· Interface Applications






Specifications

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

−60

V

Gate-source voltage

VGSS

±20

V

Drain current

ID

-200

mA

IDP

-800

Drain power dissipation (Ta = 25)

PD

200

mW

Channel temperature

Tch

150

Storage temperature range

Tstg

−55~150


Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note: This transistor is the electrostatic sensitive device. Please handle with caution.








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