2SJ162

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Gate Charge (Qg) @ Vgs: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Current - Continuous Drain (Id) @ 25° C: 7A
Mounting Type: Through Hole
Packaging: Bulk
Input Capacitance (Ciss) @ Vds: 900pF @ 10V
Power - Max: 100W
Manufacturer: Renesas Electronics America
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Drain to Source Voltage (Vdss): 160V


Features:

•  Good frequency characteristic
•  High speed switching
•  Wide area of safe operation
•  Enhancement-mode
•  Good complementary characteristics
•  Equipped with gate protection diodes
•  Suitable for audio power amplifier


Application

Low frequency power amplifier
Complementary pair with 2SK1056, 2SK1057 and 2SK1058


Specifications

_{^{Drain to sourcevoltage         2SJ160          V}DSX             ^{120                  V
                                   2SJ161 140
                                   2SJ162 160
Gate to source voltage                              V}GSS               ^{±15                 V
Drain current                                                    I}D               ^{7              A
Body to drain diode reverse drain current IDR                    7                   A
Channel dissipation                                      P}ch*            ^{1100               W
Channel temperature                                    T}ch                ^{150              
Storage temperature                                   T}stg  ^{55 to +150}}