Features: • Excellent switching time: ton = 14 ns (typ.)• High forward transfer admittance: |Yfs| = 100 mS (min)• Low on resistance: RDS (ON) = 1.3 Ω (typ.)• Enhancement-mode• Complementary to 2SK982Specifications Characteristics Symbol Rating Un...
2SJ148: Features: • Excellent switching time: ton = 14 ns (typ.)• High forward transfer admittance: |Yfs| = 100 mS (min)• Low on resistance: RDS (ON) = 1.3 Ω (typ.)• Enhancemen...
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Characteristics |
Symbol |
Rating |
Unit | |
Drain-Source Voltage |
VDSS |
-60 |
V | |
Gate-Source Voltage |
VGSS |
±20 |
V | |
Drain Current | DC |
ID |
-200 |
mA |
Pulse |
IDP |
-800 | ||
Drain power dissipation (Ta = 25) |
PD |
400 |
mW | |
Channel temperature |
Tch |
150 |
||
Storage temperature range |
TJ, TSTG |
-55~150 |
Note:Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and
the significant change in temperature, etc.) may cause this product to decrease in the reliability
significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within
the absolute maximum ratings. Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods)
and individual reliability data (i.e. reliability test report and estimated failure rate, etc).