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2SD1999

Features: · Low saturation voltage.· Contains diode between collector and emitter.· Contains bias resistance between base and emitter.· Large current capacity.· Small-sized package making it easy to provide highdensity, small-sized hybrid ICs.PinoutSpecifications Parameter Symbol Cond...

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2SD1999: Features: · Low saturation voltage.· Contains diode between collector and emitter.· Contains bias resistance between base and emitter.· Large current capacity.· Small-sized package making it easy to...

2SD1999 Data Sheet

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Part Number:
2SD1999
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Low saturation voltage.
· Contains diode between collector and emitter.
· Contains bias resistance between base and emitter.
· Large current capacity.
· Small-sized package making it easy to provide highdensity, small-sized hybrid ICs.




Pinout






Specifications

Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
()25
V
Collector-to-Emitter Voltage
VCEO
()20
V
Emitter-to-Base Voltage
VEBO
()6
V
Collector Current
IC
()4
A
Collector Current (Pulse)
ICP
()6
A
Collector Dissipation
PC
 Mounted on ceramic board (250mm2X0.8mm)
1.5
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
55 to +150
°C


Absolute maximum ratings
VCEO [V] 20
IC [A] 4
PC [W] 1.5
When mounted on ceramic substrate (250mm²*0.8mm) 1unit
Electrical characteristics
hFE min 70
hFE max -
VCE [V] 2
IC [A] 0.5
VCE (sat) typ [V] 0.25
VCE (sat) max [V] 0.5
IC [A] 3
IB [mA] 150





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