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2SD1899-Z

Features: Power dissipation PCM: 2 W (Tamb=25)Collector current ICM: 3 ACollector-base voltage V(BR)CBO: 60 VOperating and storage junction temperature range TJ, Tstg: -55 to +150Specifications Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base break...

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2SD1899-Z: Features: Power dissipation PCM: 2 W (Tamb=25)Collector current ICM: 3 ACollector-base voltage V(BR)CBO: 60 VOperating and storage junction temperature range TJ, Tstg: -55 to +150Specifications ...

2SD1899-Z Data Sheet

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Part Number:
2SD1899-Z
Supply Ability:
5000

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Product Details

Description



Features:

Power dissipation PCM: 2 W (Tamb=25)
Collector current ICM: 3 A
Collector-base voltage V(BR)CBO: 60 V
Operating and storage junction temperature range TJ, Tstg: -55 to +150




Specifications

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=100A, IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic=1mA, IB=0

60

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100A,IC=0

7

V

Collector cut-off current

ICBO

VCB=60V, IE=0

10

A

Emitter cut-off current

IEBO

VEB=7V, IC=0

10

A

DC current gain

hFE(1)

VCE=2V, IC=200mA

60

hFE(2)

VCE=2V, IC=600mA

100

400

hFE(3)

VCE=2V, IC=2A

50

Collector-emitter saturation voltage

VCE(sat)

IC=1.5A, IB=150mA

0.25

V

Base-emitter saturation voltage

VBE(sat)

IC=1.5A, IB=150mA

1.2

V

Transition frequency

fT

VCE=5V, IC=1.5A

120

MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

30

pF

Switching Time

Turn on Time

ton

VCC=30V, IC=1A, IB1=-IB2=-0.05A

0.5

s

Storage Time

tstg

 2.0
Fall Time

tf

 0.5





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