SpecificationsDescriptionThe 2SD1898HRAT100R is one member of the 2SD1898 family which is designed as the NPN silicon epitaxial planar transistor device that can be used in switching applications. The absolute maximum ratings of the 2SD1898HRAT100R can be summarized as:(1)Junction Temperature: +1...
2SD1898 HRAT100R: SpecificationsDescriptionThe 2SD1898HRAT100R is one member of the 2SD1898 family which is designed as the NPN silicon epitaxial planar transistor device that can be used in switching applications. ...
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The 2SD1898HRAT100R is one member of the 2SD1898 family which is designed as the NPN silicon epitaxial planar transistor device that can be used in switching applications.
The absolute maximum ratings of the 2SD1898HRAT100R can be summarized as:(1)Junction Temperature: +150 ;(2)Storage Temperature: -55 to +150 ;(3)Collector to Base Voltage: 100 V;(4)Collector to Emitter Voltage: 80 V;(5)Emitter to Base Voltage: 5.0 V;(6)Collector Current: 1 or 2 A;(7)Total Power Dissipation: 500 mW. If you want to know more information such as the electrical characteristics about the 2SD1898HRAT100R, please download the datasheet in www.seekic.com or www.chinaicmart.com.