2SD1898R

The 2SD1898R is designed as one kind of power transistor (80V, 1A) that has five points of features:(1)high VCEO, VCEO = 80V;(2)High IC, IC = 1A (DC);(3)good hFE linearity;(4)low VCE(sat);(5)complements the 2SB1260 / 2SB1241 / 2SB1181. And the structure of this device is epitaxial planar type NPN silicon transistor. The absolute maximum ratings of the 2SD1898R can be summarized as:(1)collector-base voltage: 100 V;(2)collector-emitter voltage: 80 V;(3)emitter-base voltage: 5 V;(4)collector current: 1 A or 2 A;(4)junction temperature:150;(5)storage temperature:-55 to +150.

And the electrical characteristics of the 2SD1898R can be summarized as:(1)collector-base breakdown voltage: 100 V;(2)collector-emitter breakdown voltage: 80 V;(3)emitter cutoff current: 1 uA;(4)collector-emitter saturation voltage: 0.15 V;(5)DC current transfer ratio: 82 to 270;(6)transition frequency: 100 MHz;(7)output capacitance: 20 pF. If you want to know more information such as the electrical characteristics about the 2SD1898R, please download the datasheet in www.seekic.com or www.chinaicmart.com.