DescriptionThe 2SD1897E is designed as one kind of power transistor (100V, 5A) that has four points of features:(1)low saturation voltage, typical VCE(sat)=0.3 V at Ic/IB=3A/ 0.3A;(2)high DC current gain (160 to 500);(3)Pc=30 W. (Tc=25);(4)wide SOA (safe operating area). The absolute maximum rati...
2SD1897E: DescriptionThe 2SD1897E is designed as one kind of power transistor (100V, 5A) that has four points of features:(1)low saturation voltage, typical VCE(sat)=0.3 V at Ic/IB=3A/ 0.3A;(2)high DC current...
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The 2SD1897E is designed as one kind of power transistor (100V, 5A) that has four points of features:(1)low saturation voltage, typical VCE(sat)=0.3 V at Ic/IB=3A/ 0.3A;(2)high DC current gain (160 to 500);(3)Pc=30 W. (Tc=25);(4)wide SOA (safe operating area).
The absolute maximum ratings of the 2SD1897E can be summarized as:(1)collector-base voltage: 100 V;(2)collector-emitter voltage: 100 V;(3)emitter-base voltage: 5 V;(4)collector current: 5 or 10 A;(4)junction temperature:150;(5)storage temperature:-55 to +150.
And the electrical characteristics of the 2SD1897E can be summarized as:(1)collector-base breakdown voltage: 100 V;(2)collector-emitter breakdown voltage: 100 V(3)emitter cutoff current: 10 uA;(4)collector-emitter saturation voltage: 0.3 V;(5)DC current transfer ratio: 100 to 200;(6)transition frequency: 8 MHz;(7)output capacitance: 100 pF. If you want to know more information such as the electrical characteristics about the 2SD1897E, please download the datasheet in www.seekic.com or www.chinaicmart.com.