2SD1893

The 2SD1893 (Silicon NPN triple diffusion planar type Darlington) is used in mpower amplification Complementary to 2SB1253, which possesses Low collector to emitter saturation voltage VCE(sat): <2.5V, High foward current transfer ratio hFE: 5000 to 30000, Optimum for 40W HiFi output, Full-pack package which can be installed to the heat sink with one screw, Optimum for 40W HiFi output.
Some parameters of the 2SD1893 are got at Ta(=25°C), VCBO(Collector-base voltage)=130V, VCEO(Collector-emitter voltage)=110V, VEBO(Emitter-base voltage, open collector)=5V, IC (Collector Current(DC))=6A, ICP(Collector current Pulsed)=10A, IB(Base current)=-0.5A, TJ (Junction temperature)=150°C, Tstg(Junction and Storage temperature)=-55 to 150°C.
Some about the electrical properties of the 2SD1893 are also got at Ta(25°C unless otherwise noted), ICBO(Collector cut-off current, VCB =130V, IE = 0)=100µA(Max.), ICEO(ollector cut-off current, IC = 30mA, IB = 0)=110µA(MIN.), IEBO(Emitter cut-off current,VEB = 5V, IC = 0)=-100µA(MAX.), hFE-1 (DC Current Gain, VCE = 5V, IC = 1A)=2000(min), hFE-2(DC Current Gain, VCE = 5V, IC = 5A)=5000(min)/30000(MAX)(hFE (2) classification Q: 5000 to 15000 P: 8000 to 30000), VCE (sat) (Collector-emitter saturation voltage, IC = 5A, IB =5mA)=2.5(Max)V, VBE(Base-emitter saturation voltage, VCE = 10V, IC =5mA)=3.0(max), fT(Transition frequency, VCE =10V, IC =-0.5A, f = 1MHz)=20(typ)MHz, Cob(Collector output capacitance, VCB =-10 V, IE = 0, f = 1 MHz)=62(typ)pF, ton(Turn-on time)/tstg(Storage time)/tf(Fall time)=1.4/4.5/0.8(µs, IC = 5A, IB1 = 5mA, IB2 = 5mA, Vcc = 50V).