2SD1892

The 2SD1892 (Silicon NPN triple diffusion planar type Darlington) is used in mpower amplification Complementary to 2SB1252, which possesses Low collector to emitter saturation voltage VCE(sat): <2.5V, High foward current transfer ratio hFE: 5000 to 30000, Optimum for 40W HiFi output, Full-pack package which can be installed to the heat sink with one screw, Optimum for 35W HiFi output.
Some parameters of the 2SD1892 are got at Tc(=25°C), VCBO(Collector-base voltage)=120V, VCEO(Collector-emitter voltage)=100V, VEBO(Emitter-base voltage, open collector)=5V, IC(Collector Current(DC))=5A, ICP(Collector current Pulsed)=8A, TJ(Junction temperature)=150°C, Tstg(Junction and Storage temperature)=-55 to 150°C.
Some about the electrical properties of the 2SD1892 are also got at Ta(25°C), ICBO(Collector cut-off current, VCB =120V, IE = 0)=100µA(Max.), ICEO(collector cut-off current, VCE = 100V, IB =0)=110µA(MIN.), IEBO(Emitter cut-off current, VEB = 5V, IC = 0)=100µ (MAX.), VCEO(Collector to emitter voltage)=100(min)V, hFE-1 (DC Current Gain, VCE = 5V, IC = 1A)=2000(min), hFE-2(DC Current Gain, VCE = 5V, IC = 5A)=5000(min)/30000(MAX)(hFE (2) classification Q: 5000 to 15000 P: 8000 to 30000), VCE (sat) (Collector-emitter saturation voltage, IC = 4A, IB =4mA)=2.5(Max)V, VBE(Base-emitter saturation voltage, VCE = 4V, IC =4mA)=3.0(max), fT(Transition frequency, VCE =10V, IC =0.5A, f = 1MHz)=20(typ)MHz, ton(Turn-on time)/tstg(Storage time)/tf(Fall time)=2.5/3.5/1.0(µs, IC = 4A, IB1 = 4mA, IB2 = 4mA, Vcc = 50V).