2SD1886C

The 2SD1886C (NPN Triple Diffused Planar Silicon Transistor) is used in Adoption of MBIT process, which possesses High breakdown voltage (VCBO=1500V), High reliability (Adoption of HVP process), High speed.
Some parameters of the 2SD1886C are got at Ta(=25°C), VCBO(Collector-base voltage)=1500V, VCEO(Collector-emitter voltage)=700V, VEBO(Emitter-base voltage, open collector)=5V, IC(Collector Current(DC))=8A, ICP(Collector current Pulsed)=25A, TJ(Junction temperature)=150°C, Tstg(Junction and Storage temperature)=-55 to 150°C, PC(Collector Dissipation)=3.0W/80W(Tc=25).
Some about the electrical properties of the 2SD1886C are also got at Ta(25°C), ICBO(Collector cut-off current, VCB =800V, IE = 0)=100µA(Max.), ICES(collector cut-off current, VCE = 1500V, RBE=0A )=1.0mA(MIN.), IEBO(Emitter cut-off current, VEB = 4V, IC = 0)=1.0mA (MAX.), VCEO(sus)(Collector to emitter voltage, IC=100mA, IB=0A)=700(min)V, hFE-1 (DC Current Gain, VCE = 5V, IC = 1A)=15(min), hFE-2(DC Current Gain, VCE = 5V, IC = 8A)=5(min)/8(MAX, VCE (sat) (Collector-emitter saturation voltage, IC = 7.2A, IB =1.44A)=3(Max)V, VBE(Base-emitter saturation voltage, IC=7.2A, IB=1.44A)=1.5(max), Tf(Fall Time, VCE =10V, IC =0.5A, f = 1MHz)=20(typ)MHz, ton(Turn-on time)/tstg(Storage time)/tf(Fall time, IC=5A, IB1=1A, IB2=-2A )=0.3µs(max). Above information is all relevant information about 2SD1886C, if we find any new information, we will summarize for you,you can find it in www.ChinaICMart.com or www.seekic.com.