2SD188

The 2SD188 is a kind of silicon NPN power transistor.It is packaged in TO-3.Besides,it has large current capability
and wide area of safe operation.It is specially designed for audio frequency output applications.
You have to get some detail information about the absolute maximum ratings if you want to purchase 2SD188.The Storage Temperature (T_stg) is from -55 to +150 .The Junction Temperature (T_j) is +150 .The Collector to Base Voltage (V_CBO) is 200 V.The Collector to Emitter Voltage (V_CEO) is 200 V.The Emitter to Base Voltage (V_EBO) is 6 V.The Collector Current DC (I_C) is 7 A.The Collector Power Dissipation (P_C) is 60 W at T_C = 75.
The following is the electrical characteristics of 2SD188 at T_j=25.The Min. Collector-emitter breakdown voltage (V_(BR)CEO) is 100 V at I_C=50mA ;I_B=0.The Min. Collector-base breakdown voltage (V_(BR)CBO) is 100 V at I_C=1mA ;I_E=0.The Min. Emitter-base breakdown voltage (V_(BR)EBO) is 6 V at I_E=1mA ;I_C=0.The Max. Collector Cutoff Current(I_CBO) is 0.1 mA at V_CB = 100 V; I_E=0.The Max. Emitter Cutoff Current (I_EBO) is 0.1 mA at V_EB = 6 V;I_C=0.The Min. DC Current Gain (h_FE) is 30 and the Max. is 120 at V_CE = 2V, I_C = 3A. The Max. Collector to Emitter Saturation Voltage (V_CE(sat)) is 2.0 V and the Max. Base to Emitter Saturation Voltage (V_BE(sat)) is 2.5 V under the condition that I_C = 5A,I_B = 0.5A.The Typical Transition Frequency (f_T) is 10 MHz at V_CE = 10 V, I_C = 0.5 A.