2SD1879

DescriptionThe 2SD1879 is a kind of highvoltage,high-speed switching NPN transistors in a plastic envelope with integrated efficiency, is primarily used in horizontal deflection circuites of colour television receivers.You have to get some detail information about the absolute maximum ratings if y...

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SeekIC No. : 004224363 Detail

2SD1879: DescriptionThe 2SD1879 is a kind of highvoltage,high-speed switching NPN transistors in a plastic envelope with integrated efficiency, is primarily used in horizontal deflection circuites of colour ...

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Part Number:
2SD1879
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Description

The 2SD1879 is a kind of highvoltage,high-speed switching NPN transistors in a plastic envelope with integrated efficiency, is primarily used in horizontal deflection circuites of colour television receivers.
You have to get some detail information about the absolute maximum ratings if you want to purchase 2SD1879.The Storage Temperature (Tstg) is from -55 to +150 .The Junction Temperature (Tj) is +150 .The Max. Collector-emitter Voltage Peak Value (VCESM) is 1500 V at VBE = 0V.The Collector-emitter Voltage (VCEO) is 600 V.The Max. Emitter-base Voltage(open collector) (VEBO) is 5 V.The Collector Current DC (IC) is 6 A.The Base Current DC (IB) is 2 A.The Base Current Peak Value (IBM) is 4 A.The Total Power Dissipation (Ptot) is 60 W at Tmb 25.
The following is the electrical characteristics of 2SD1879 at Tc=25.First is about the Collector Cutoff Current.The Max. ICE is 1.0 mA and the Max. ICES is 2.0 mA on the condition that VBE = 0V,VCE = VCESMmax and Tj = 125.The Min. DC Current Gain (hFE) is 8 and the Max. is 30 at VCE = 5 V, IC = 1.0 A. The Max. Collector to Emitter Saturation Voltage (VCE(sat)) is 5 V and the Max. Base to Emitter Saturation Voltage (VBE(sat)) is 1.5 V under the condition that IC = 5.0 A,IB = 1.0 A.The Min Transition Frequency (fT) is 3 MHz at VCE = 10V, IC = 0.1A.The Max. Diode Forward Voltage (VF) is 1.5 V at IF = 5.0 A.The Max.Turn-off Storage time and Turn-off Fall time (tf) is 1.0 s on the condition that IC=4A,IB1=0.5 A, IB2=0.8 A,VCC=100 V.








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