2SD1876

The 2SD1876 is a kind of NPN triple diffused planar silicon transistor.It has high Collector-Base VoltagE(V_CBO=1500V) and high speed switching.
You have to get some detail information about the absolute maximum ratings at Ta=25 if you want to purchase 2SD1876.The Storage Temperature (T_stg) is from -50~+150 .The Junction Temperature (T_j) is +150 .The Collector to Base Voltage (V_CBO) is 1500 V.The Collector to Emitter Voltage (V_CEO) is 1500 V.The Emitter to Base Voltage (V_EBO) is 6 V.The Collector Current DC (I_C) is 3 A.The Collector Dissipation (P_C) is 50 W at Tc = 25.
The following is the electrical characteristics of 2SD1876 at Tc=25.First is about the Collector Cutoff Current.The Max. I_CBO is 10 A at RBE=0.The Collector- Emitter Cutoff Current(V_BE=0) (I_CES) is 1.0 mA at V_CE= 1400 V.The Max. Emitter Cutoff Current (I_EBO) is 1.0 mA at V_CB= 800 V,I_E=0.The Min. DC Current Gain (h_FE) is 8 at V_EB= 4V,I_C=0. The Max. Collector to Emitter Saturation Voltage (V_CE(sat)) is 5.0 V at V_CE= 5 V,I_C= 2 A and I_B=0.6 A.