2SD1858

The 2SD1858 is designed as one kind of medium power transistor (32V, 1A) that has two points of features:(1)low VCE(sat), VCE(sat)=0.15V (typical) (Ic / IB=500mA / 50 mA);(2)complements the 2SB1237. And the structure of this device is epitaxial planar type NPN silicon transistor. The absolute maximum ratings of the 2SD1898R can be summarized as:(1)collector-base voltage: 40 V;(2)collector-emitter voltage: 32 V;(3)emitter-base voltage: 5 V;(4)collector current: 1 A or 2 A;(4)junction temperature:150;(5)storage temperature:-55 to +150.

And the electrical characteristics of the 2SD1858 can be summarized as:(1)collector-base breakdown voltage: 40 V;(2)collector-emitter breakdown voltage: 32 V;(3)emitter cutoff current: 0.5 uA;(4)collector-emitter saturation voltage: 0.15 V;(5)DC current transfer ratio: 0.5 uA;(6)transition frequency: 150 MHz;(7)output capacitance: 15 pF. If you want to know more information such as the electrical characteristics about the 2SD1858, please download the datasheet in www.seekic.com or www.chinaicmart.com.