Features: · High DC current gain.· Large current capacity· Wide ASO.· On-chip Zener diode of 60±10V between collector and base.· Uniformity in collector-to-base breakdown voltage due to adoption of accurate impurity diffusion process.· High inductive load handling capability.· Micaless package fac...
2SD1838: Features: · High DC current gain.· Large current capacity· Wide ASO.· On-chip Zener diode of 60±10V between collector and base.· Uniformity in collector-to-base breakdown voltage due to adoption of ...
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-to-Base Voltage |
VCBO |
50* |
V | |
Collector-to-Emitter Voltage |
VCEO |
50* |
V | |
Emitter-to-Base Voltage |
IEBO |
6 |
V | |
Drain Current |
IC |
5 |
A | |
Collector Current (Pulse) |
ICP |
8 |
A | |
Base Current |
IB |
0.5 |
A | |
Allowable Power Dissipation |
PD |
2.0 |
W | |
Tc=25°C |
25 |
W | ||
Channel Temperature |
Tj |
150 |
°C | |
Storage Temperature |
Tstg |
55 to +150 |
°C |
Absolute maximum ratings | |
---|---|
VCEO [V] | 50
C-B Zener diode (60±10V) |
IC [A] | 5 |
PC Tc=25°C [W] | 25 |
Electrical characteristics | |
---|---|
hFE min | 1000 |
VCE [V] | 3 |
IC [A] | 2.5 |
VCE (sat) max [V] | 1.5 |
IC [A] | 2.5 |
IB [mA] | 5 |
fT typ [MHz] | 20 |
Resistance R1/R2 [] | - |