2SD1834

The 2SD1834 is designed as one kind of medium power transistor (60V, 1A) that has two points of features:(1)darlington connection for high DC current gain (typically, DC current gain=15000 at VCE=3 V, Ic=0.5 A);(2)high input impedance. And the structure of this device is epitaxial planar type NPN silicon transistor. The absolute maximum ratings of the 2SD1898R can be summarized as:(1)collector-base voltage: 60 V;(2)collector-emitter voltage: 60 V;(3)emitter-base voltage: 7 V;(4)collector current: 1 A or 2 A;(4)junction temperature:150;(5)storage temperature:-55 to +150.

And the electrical characteristics of the 2SD1834 can be summarized as:(1)collector-base breakdown voltage: 60 V;(2)collector-emitter breakdown voltage: 60 V;(3)emitter cutoff current: 1 uA;(4)collector-emitter saturation voltage: 0.9 V;(5)DC current transfer ratio: 2000;(6)transition frequency: 100 MHz;(7)output capacitance: 7 pF. If you want to know more information such as the electrical characteristics about the 2SD1834, please download the datasheet in www.seekic.com or www.chinaicmart.com.