2SD1819A-S

The 2SD1819A-S is designed as one kind of silicon NPN epitaxial planer type device that has three points of features such as (1)High foward current transfer ratio hFE; (2)Low collector to emitter saturation voltage VCE(sat); (3)S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

The absolute maximum ratings of the 2SD1819A-S can be summarized as:(1)Collector to base voltage: 60 V;(2)Collector to emitter voltage: 50 V;(3)Emitter to base voltage: 7 V;(4)Peak collector current: 200 mA;(5)Collector current: 100 mA;(6)Collector power dissipation: 150 mW;(7)Junction temperature: 150 ;(8)Storage temperature: -55 to +150 .

The electrical characteristics of 2SD1819A-S can be summarized as:(1)Collector cutoff current: 0.1 uA or 100 uA;(2)Collector to base voltage: 60 V;(3)Collector to emitter voltage: 50 V;(4)Emitter to base voltage: 7 V;(5)Collector to emitter saturation voltage: 0.1 to 0.3 V;(6)Transition frequency: 150 MHz;(7)Collector output capacitance: 3.5 pF. If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com.