2SD180A

The 2SD180A is a type of transistor. It is silicon NPN epitaxial planer type. For general amplification complementary to 2SB1219A.

Features of 2SD180A are:(1)low collector to emitter saturation voltage VCE(sat);(2)s-mini type package, allowing do wnsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

The absolute maximum ratings and electrical characteristics of the 2SD180A can be summarized as:(1)collector to ba se voltage: 60V;(2)collector to emitter voltage: 50V;(3)emitter to base voltage: 5V;(4)peak collector current: 1A;(5)collector current: 500mA;(6)collector power dissipation: 150mW;(7)junction temperature: 150°C;(8)storage temper ature:-55 to +150°C. Electrical characteristics:(1)collector cutoff current(VCB = 20 V, IE = 0): 0.1A max; (2)Collector to base voltage(IC = 10 A, IE = 0): 60V min; (3)collector to emitter voltage(IC = 2 mA, IB = 0): 50V min; (4)emitter to base voltage(IE = 10 A, IC = 0): 5V min; (5)forward current transfer ratio(VCE=10V, IC=150mA): 85 min and 340 max; (6)collector to emitter saturation voltage(IC = 300 mA, IB = 30 mA): 0.35V typ and 0.6V max, etc.