DescriptionThe 2SD1794 is a kind of darlington transistor.You have to get some detail information about the absolute maximum ratings if you want to purchase 2SD1794.The Storage Temperature (Tstg) is from -55~+150 .The Junction Temperature (Tj) is +150 .The Collector to Base Voltage (VCBO) is 200 V...
2SD1794: DescriptionThe 2SD1794 is a kind of darlington transistor.You have to get some detail information about the absolute maximum ratings if you want to purchase 2SD1794.The Storage Temperature (Tstg) is...
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The 2SD1794 is a kind of darlington transistor.You have to get some detail information about the absolute maximum ratings if you want to purchase 2SD1794.The Storage Temperature (Tstg) is from -55~+150 .The Junction Temperature (Tj) is +150 .The Collector to Base Voltage (VCBO) is 200 V.The Collector to Emitter Voltage (VCEO) is 200 V.The Emitter to Base Voltage (VEBO) is 7 V.The Collector Current DC (IC) is 10 A.The Collector Current Peak (ICP) is 15 A.The Base Current DC (IB) is 0.5 A.The Base Current Peak (IBP) is 1.0 A.The Total Transistor Dissipation (PT) is 50 W at Tc = 25.The Dielectric Strength (Vdis) is 2 kV at terminals to case AC 1 minute. The Mounting Torque (TOR) is 0.5 N.m but the recommended torque is 0.3N.m.
The following is the electrical characteristics of 2SD1794 at Tc=25.First is about the Collector Cutoff Current.The Max. ICBO is 0.1 mA at VCB = 200 V.The Max. ICEO is 0.1 mA at VCE = 200 V. The Max. Emitter Cutoff Current (IEBO) is 5 mA at VEB = 7V.The Min. DC Current Gain (hFE) is 1500 and the Max. is 30000 at VCE = 3V, IC = 5A. The Max. Collector to Emitter Saturation Voltage (VCE(sat)) is 1.5 V and the Max. Base to Emitter Saturation Voltage (VBE(sat)) is 2.0 V under the condition that IC = 5 A,IB = 10 mA. The Max Thermal Resistance (jc) is 2.5 /W.The Typical Transition Frequency (fT) is 20 MHz at VCE = 10V, IC = 1A.Under the condition that IC = 5A,IB1 =IB2 = 10 mA,RL = 6 and VBB2 = 4V, the Max Turn on Time (ton) is 2 s,the Max. Storage Time (ts) is 12 s and the Max. Fall Time (tf) is 5 s.