2SD1782KT146 R

The 2SD1782KT146R is designed as one kind of power transistor (80V, 0.5A) that has three points of features:(1)Low VCE(sat). VCE(sat) =0.2V(Typ.) (IC / IB=0.5 A / 50mA); (2)High VCEO, VCEO=80V; (3)Complements the 2SB1198K. And the structure of this device is Epitaxial planar type and NPN silicon transistor.

The absolute maximum ratings of the 2SD1782KT146R can be summarized as:(1)collector-base voltage: 80 V;(2)collector-emitter voltage: 80 V;(3)emitter-base voltage: 5 V;(4)collector current: 0.5 A;(5)junction temperature: 150 ;(6)storage temperature: -55 to +150 ;(7)Collector power dissipation: 0.2 W.

The electrical characteristics of 2SD1782KT146R can be summarized as:(1)collector-base breakdown voltage: 80 V;(2)collector-emitter breakdown voltage: 80 V;(3)emitter-base breakdown voltage: 5 V;(4)collector cutoff current: 0.5 uA;(5)emitter cutoff current: 0.5 uA;(6)collector-emitter saturation voltage: 0.20 to 0.50 V;(7)transition frequency: 100 MHz;(8)output capacitance: 7.5 pF. If you want to know more information such as the electrical characteristics about the 2SD1782KT146R, please download the datasheet in www.seekic.com or www.chinaicmart.com.