Features: SpecificationsDescription The 2SD1771 and 2SD1771A is Silicon NPN triple diffusion planar type.The device for power amplification,for TV vertical deflection output,complementary to 2SB1191 and 2SB1191A.The device has 3 features.The first one is high collector to emitter VCEO.The second o...
2SD1771A: Features: SpecificationsDescription The 2SD1771 and 2SD1771A is Silicon NPN triple diffusion planar type.The device for power amplification,for TV vertical deflection output,complementary to 2SB1191...
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The 2SD1771 and 2SD1771A is Silicon NPN triple diffusion planar type.The device for power amplification,for TV vertical deflection output,complementary to 2SB1191 and 2SB1191A.The device has 3 features.The first one is high collector to emitter VCEO.The second one is large collector power dissipation PC.The third one is N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
The 2SD1771 and 2SD1771A has some informations about absolute maximum ratings (TC=25°C).When parameter is collector to base voltage 2SD1771,symbol is VCBO,ratings is 200,unit is V.When parameter is collector to base voltage, symbol is VCBO,ratings is 200,unit is V.When parameter is collector to emitter voltage 2SD1771,symbol is VCEO,ratings is 150,unit is V.When parameter is collector to emitter voltage 2SD1771A,symbol is VCEO,ratings is 180,unit is V.When parameter is Emitter to base voltage,symbol is VEBO,ratings is 6,unit is V.When parameter is Peak collector current,symbol is ICP,ratings is 2,unit is A.When parameter is Collector current,symbol is IC,ratings is 1,unit is A.When parameter is collector power dissipation TC=25°C,symbol is PC,ratings is 25,unit is W.When parameter is collector power dissipation Ta=25°C,symbol is PC,ratings is 1.3,unit is W.When parameter is junction temperature,symbol is Tj,ratings is 50,unit is °C.When parameter is storage temperature,symbol is Tstg,ratings is 55 to +150,unit is °C.
The 2SD1771 and 2SD1771A has some informations about electrical characteristics (TC=25°C).When parameter is collector cutoff current,symbol is ICBO,conditions is VCB = 200V, IE = 0,max is 50,unit is A.When parameter is emitter cutoff current,symbol is IEBO,conditions is VEB = 4V, IC = 0,max is 50,unit is A.When parameter is collector to emitter voltage 2SD1771,symbol is VCEO,conditions is IC = 5mA, IB = 0,min is 150,unit is V.When parameter is collector to emitter voltage,symbol is VCEO,conditions is IC = 5mA, IB = 0,min is 180,unit is V.
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