2SD1766T100R-K

The 2SD1781KT146R is designed as one kind of medium power transistor (32V, 2A) that has three points of features:(1)Low VCE(sat). VCE(sat) = 0.5 V(Typ.) (IC / IB= 2 A / 200 mA); (2)High VCEO, VCEO=80V; (3)Complements the 2SB1188 / 2SB1182 / 2SB1240. And the structure of this device is Epitaxial planar type and NPN silicon transistor.

The absolute maximum ratings of the 2SD1781KT146R can be summarized as:(1)collector-base voltage: 40 V;(2)collector-emitter voltage: 32 V;(3)emitter-base voltage: 5 V;(4)collector current: 2 or 2.5 A;(5)junction temperature: 150 ;(6)storage temperature: -55 to +150 ;(7)Collector power dissipation: 1 W.

The electrical characteristics of 2SD1781KT146R can be summarized as:(1)collector-base breakdown voltage: 40 V;(2)collector-emitter breakdown voltage: 32 V;(3)emitter-base breakdown voltage: 5 V;(4)collector cutoff current: 1 uA;(5)emitter cutoff current: 1 uA;(6)collector-emitter saturation voltage: 0.50 to 0.80 V;(7)transition frequency: 100 MHz;(8)output capacitance: 30 pF. If you want to know more information such as the electrical characteristics about the 2SD1781KT146R, please download the datasheet in www.seekic.com or www.chinaicmart.com.