2SD1755A

The 2SD1775A is a type of transistor. It is silicon NPN triple diffuse type for high-speed switching and high current a mplification ratio.

Features of 2SD1775A are:(1)high foward current transfer ratio hFE;(2)satisfactory linearity of foward current transf er ratio hFE;(3)N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.

The absolute maximum ratings and electrical characteristics of the 2SD1775A can be summarized as:(1)collector to base voltage: 100V;(2)collector to emitter voltage: 80V;(3)emitter to base voltage: 6V;(4)peak collector current: 4A;(5)collector current: 2A;(6)collector power dissipation(Tc=25): 25W;(7)junction temperature: 150°C;(8)storage temperature:-55 to +150°C. Electrical characteristics:(1)collector cutoff current(VCB = 80 V, IE = 0): 100A max; (2)collector to emitter voltage(IC = 25mA, IB = 0): 60V min; (3)forward current transfer ratio(VCE = 4V, IC = 300mA): 500min and 1500max; (4)collector to emitter saturation voltage(IC = 1A, IB = 25mA): 1.0V max; (5)Base to emitter saturation voltage(IC = 1A, IB = 25mA): 1.2V max; (6)transition frequency(VCE = 12V, IC = 200mA, f = 10MHz): 40M Hz, etc.