Application·For high power amplifier applicationsSpecifications SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector ...
2SD1712: Application·For high power amplifier applicationsSpecifications SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Col...
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SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
VCBO |
Collector-base voltage |
Open emitter |
100 |
V |
VCEO |
Collector-emitter voltage |
Open base |
100 |
V |
VEBO |
Emitter-base voltage |
Open collector |
5 |
V |
IC |
Collector current |
5 |
A | |
ICP |
Collector current-peak |
8 |
A | |
PC |
Collector power dissipation |
TC=25 |
60 |
W |
Ta=25 |
3 | |||
Tj |
Junction temperature |
150 |
||
Tstg |
Storage temperature |
-55~150 |
The 2SD1712 features:
·With TO-3PFa package
·Complement to type 2SB1157
·High transition frequency fT
·Satisfactory linearity of hFE
·Wide area of safe operation