DescriptionThe 2SD1707 is a type of power transistor, which is silicon PNP epitaxial planar type. Power switching complemenary pair with 2SB1156.Features of 2SD1707 are:(1)low collector-emitter saturation voltage; (2)good linearity of DC curre nt gain; (3)hign collector current; (4) full pack pac...
2SD1707: DescriptionThe 2SD1707 is a type of power transistor, which is silicon PNP epitaxial planar type. Power switching complemenary pair with 2SB1156.Features of 2SD1707 are:(1)low collector-emitter satu...
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The 2SD1707 is a type of power transistor, which is silicon PNP epitaxial planar type. Power switching complemenary pair with 2SB1156.Features of 2SD1707 are:(1)low collector-emitter saturation voltage; (2)good linearity of DC curre nt gain; (3)hign collector current; (4)"full pack" package for simplified mounting on a heat sink with one screw.
The absolute maximum ratings and electrical characteristics(Tc=25) of the 2SD1707 can be summarized as: (1)colle ctor-base voltage: 130V; (2)collector-emitter voltage: 80V; (3)emitter-base voltage: 7V; (4)peak collector current: 30 A; (5):collector current: 20A; (6)collector power dissipation(Tc=25): 20W; (7)junction temperature: 150; (8)stora ge temperature: -55 to 150. Electrical characteristics: (1)collector cutoff current(VCB=100V, IE=0): 10uA max; (2)emitter cutoff current(VEB=5V, IC=0): 50uA max; (3)collector-emitter voltage(IC=10mA, IB=0): 80V min;(4)DC current gain(VCE=-2V, IC=0.1A): 45min;(5):collector-emitter saturation voltage(IC=8A, IB=0.4A): 0.5V max; (6)base-emitter saturation voltage(IC=8A, IB=0.4A): 1.5V max;(7)fall time(IC=8A, IB1=0.8A, IB2=-0.8A, Vcc=50V): 0.2us; (8)storage time(IC=8A, IB1=0.8A, IB2=-0.8A, Vcc=50V): 20.us, etc.