2SD1705

The 2SD1705 is a type of power transistor, which is silicon PNP epitaxial planar type. Power switching complementary pair with 2SB1154.Features of 2SD1705 are:(1)low collector-emitter saturation voltage; (2)good linearity of DC current gain; (3)hign collector current; (4)"full pack" package for simplified mounting on a heat sink with one screw.

The absolute maximum ratings and electrical characteristics(Tc=25) of the 2SD1705 can be summarized as: (1)colle ctor-base voltage: 130V; (2)collector-emitter voltage: 80V; (3)emitter-base voltage: 7V; (4)peak collector current: 20 A (5):collector current: 10A; (6)collector power dissipation(Tc=25): 70W; (7)junction temperature: 150; (8)storge temperature: -55 to 150. Electrical characteristics: (1)collector cutoff current(VCB=100V, IE=0): 10uA max; (2)emi ter cutoff current(VEB=5V, IC=0): 50uA max; (3)collector-emitter voltage(IC=10mA, IB=0): 80V min;(4)DC current gain(VCE=2V, IC=0.1A): 45min;(5):collector-emitter saturation voltage(IC=6A, IB=0.3A): 0.5V max; (6)base-emitter saturation(IC=6A, IB=0.3A): 1.5V max;(7)fall time(IC=6A, IB1=0.6A, IB2=-0.6A, Vcc=50V): 0.2us, etc.