2SD1665AM

The 2SD1665AM is a kind of epitaxial planar NPN silicon transistor. It is designed for medium power amplifiers. There are some features as folows: (1)high breakdown voltage: BVCEO=160 V; (2)high transition frequency (fT) and low output capacitance (Cob); (3)complementary pair with 2SB1130AM.

What comes next is the absolute maximum ratings of 2SD1665AM (Ta=25): (1)collector-base voltage, VCBO: 160 V; (2)collector-emitter voltage, VCEO: 160 V; (3)emitter-base voltage, VEBO: 5 V; (4)collector current, IC: 1.5 A and 6 A when pulse; (5)collector dissipation, PC: 1.0 W; (6)junction temperature, Tj: 150; (7)storage temperature range, Tstg: -55 to +150.

The following is the electrical characteristics of 2SD1665AM(Ta=25): (1)collector-base breakdown voltage, BVCBO: 160 V min at IC=50 A; (2)collector-emitter breakdown voltage, BVCEO: 160 V min at IC=1 mA; (3)emitter-base breakdown voltage, BVEBO: 5 V min at IE=50 A; (4)collector-emitter saturation voltage, VCE(sat): 2.0 V max at IC/IB=1 A/0.1 A; (5)base-emitter saturation voltage, VBE(sat): 1.5 V max at IC/IB=1 A/0.1 A; (6)transition frequency, fT: 80 MHz typ at VCE=5 V, IE=-0.1 A; (7)output capacitance, Cob: 20 pF at VCB=10 V, IE=0 A, f=1 MHz.