Features: SpecificationsDescriptionThe 2SD1664T100R is one member of the 2SD1664 family which is designed as the medium power transistor (32V, 1A) that has three points of features:(1)Low VCE(sat). VCE(sat) = 0.15 V(Typ.) (IC / IB= 0.5 A / 50 mA); (2)High VCEO, VCEO=80V; (3)Complements the 2SB1132...
2SD1664 T100 R: Features: SpecificationsDescriptionThe 2SD1664T100R is one member of the 2SD1664 family which is designed as the medium power transistor (32V, 1A) that has three points of features:(1)Low VCE(sat). ...
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The 2SD1664T100R is one member of the 2SD1664 family which is designed as the medium power transistor (32V, 1A) that has three points of features:(1)Low VCE(sat). VCE(sat) = 0.15 V(Typ.) (IC / IB= 0.5 A / 50 mA); (2)High VCEO, VCEO=80V; (3)Complements the 2SB1132. And the structure of this device is Epitaxial planar type and NPN silicon transistor.
The absolute maximum ratings of the 2SD1664T100R can be summarized as:(1)collector-base voltage: 40 V;(2)collector-emitter voltage: 32 V;(3)emitter-base voltage: 5 V;(4)collector current: 1 or 2 A;(5)junction temperature: 150 ;(6)storage temperature: -55 to +150 ;(7)Collector power dissipation: 0.5 or 2 W.
The electrical characteristics of this device can be summarized as:(1)collector-base breakdown voltage: 40 V;(2)collector-emitter breakdown voltage: 32 V;(3)emitter-base breakdown voltage: 5 V;(4)collector cutoff current: 0.5 uA;(5)emitter cutoff current: 0.5 uA;(6)collector-emitter saturation voltage: 0.15 to 0.4 V;(7)transition frequency: 150 MHz;(8)output capacitance: 15 pF. If you want to know more information such as the electrical characteristics about the 2SD1664T100R, please download the datasheet in www.seekic.com or www.chinaicmart.com.