2SD1662

The 2SD1662 is a kind of transistor. It is silicon NPN triple diffused type (darlington). It is intended for high current switching applications. There are some features as follows: (1)high DC current gain: hFE=1000 (min); (2)low saturation voltage: VCE(sat)=1.5 V (max); (3)monolithic construction with built-in base-emitter shunt resistor.

What comes next is about the absolute maximum ratings of 2SD1662(Ta=25): (1)collector-base voltage, VCBO: 100 V; (2)collector-emitter voltage, VCEO: 100 V; (3)emitter-base voltage, VEBO: 5 V; (4)collector current, IC: 15 A; (5)base current, IB: 1 A; (6)collector power dissipation, PC: 100 W at Tc=25; (7)junction temperature, Tj: 150; (8)storage temperature range, Tstg: -55 to 150.

The following is the electrical characteristics of 2SD1662(Ta=25): (1)collector cutoff current, ICBO: 100A max at VCB=100 V, IE=0; (2)emitter cutoff current, IEBO: 10 mA max at VEB=5 V, IC=0; (3)collector-emitter breakdown voltage, V(BR)CEO: 100 V min at IC=50 mA, IB=0; (4)DC current gain, hFE: 1000 min at VCE=3 V, IC=15 A; (5)collector-emitter saturation voltage, VCE(sat): 1.5 V max at IC=15 A, IB=0.025 A; (6)base-emitter saturation voltage, VBE(sat): 2.2 V max at IC=15 A, IB=0.025 A; (7)transition frequency, fT: 14 MHz at VCE=5 V, IC=1 A; (8)collector output capacitance, Cob: 280 pF at VCB=10 V, IE=0, f=1 MHz.